PART |
Description |
Maker |
HDC100A160 HDC100D160 HDC100A120 HDC100D120 |
Ratings of 120A and 160A @ 72VDC
|
Crydom Inc.,
|
123NQ100 123NQ080 123NQ090 123NQ100R |
100V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package 100V 120A Schottky Discrete Diode in a D-67 HALF-Pak package 80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
STV160NF02L |
N - CHANNEL 20V - 0.0016W - 160A - PowerSO-10 STripFET MOSFET N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STB200NF03 STB200NF03-1 STB200NF03T4 STP200NF03 |
N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET N-CHANNEL 30V - 0.0032 ohm - 120A D2PAK/I2PAK/TO-220 STripFET?/a> II POWER MOSFET N-CHANNEL 30V - 0.0032 ohm - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET N-CHANNEL 30V - 0.0032 ohm - 120A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL 30V - 0.0032 ohm - 120A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导
|
STP210NF02 STB210NF02-1 STB210NF02 8543 STB210NF02 |
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET?/a> II POWER MOSFET N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET From old datasheet system N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
STV160NF02LA STV160NF02LAT4 |
N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET N-CHANNEL 20V - 0.0018W - 160A PowerSO-10 STripFET TM POWER MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
PQ160QH04N PQ160QH04N1 |
160A Avg 40 Volts
|
Nihon Inter Electronics Corporation
|
FSTI16040 FSTI16045 FSTI16030 FSTI16035 FSTI16020 |
SCHOTTKY DIODES MODULE TYPE 160A
|
TRANSYS Electronics Limited
|
MB89161A MB89161 E712405 |
F 2 MC-8L MB89160/160A Series From old datasheet system
|
Fujitsu
|